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Beilstein J. Nanotechnol. 2016, 7, 228–235, doi:10.3762/bjnano.7.21
Figure 1: Simulation snapshots at 700 K, taken at different points in time (0, 4, 12 and 20 ps) spanning the ...
Figure 2: (a) Simulation snapshots at 700 K, taken at different points in time (24, 46 and 54 ps) spanning th...
Figure 3: (a) Simulation snapshots at 700 K, taken at different points in time (80, 360, 800 and 1230 ps) spa...
Figure 4: Snapshot of the nanostructure at 575 K temperature taken at t = 68 ps. As the snapshot shows, at th...
Figure 5: The potential energy of the simulated nanostructures as a function of the time at (a) low-temperatu...
Figure 6: Radius of gyration plotted as a function of the simulation time for several temperatures belonging ...
Figure 7: (a) Double exponential fit to the mean atomic volume of the simulated nanostructure as a function o...
Beilstein J. Nanotechnol. 2015, 6, 1970–1977, doi:10.3762/bjnano.6.201
Figure 1: Methods for computing Young’s modulus and the thermal expansion coefficient: (a) Young’s modulus is...
Figure 2: Variation of Young’s modulus with the core diameter of the (a) <111> and (b) <110>-oriented core/sh...
Figure 3: Quantum scaling between the real and classical (MD) temperatures for the (a) Si/Ge <111>, (b) Ge/Si...
Figure 4: Coefficients of thermal expansion plotted against the core diameter of Si/Ge and Ge/Si CSNWs orient...
Figure 5: Temperature derivatives of thermal stress at 300 K for the (a) <111>- and (b) <110>-oriented wires ...
Figure 6: Stability diagrams for CSNWs of (a) Si/Ge <111>, (b) Ge/Si <111>, (c) Si/Ge <110> and (d) Ge/Si <11...